Effect of Thermal Annealing on Structural Properties, Morphologies and Electrical Properties of TiO2 Thin Films Grown by MOCVD

Author(s):  
X. H. Xu ◽  
M. Wang ◽  
Y. Hou ◽  
S.R. Zhao ◽  
H. Wang ◽  
...  
2020 ◽  
Vol 710 ◽  
pp. 138262
Author(s):  
Nagabharana RM ◽  
Kumaraswamy GN ◽  
Susheel Kumar Gundanna ◽  
Umananda M. Bhatta

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.


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